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IRFIBE20GPBF

IRFIBE20GPBF

IRFIBE20GPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 6.5Ohm @ 840mA, 10V ±20V 530pF @ 25V 38nC @ 10V 800V TO-220-3 Full Pack, Isolated Tab

SOT-23

IRFIBE20GPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 1.4A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Power Dissipation 30W
Turn On Delay Time 8.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 1.4A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Input Capacitance 530pF
Drain to Source Resistance 6.5Ohm
Rds On Max 6.5 Ω
Height 9.8mm
Length 10.63mm
Width 4.83mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.24000 $3.24
10 $2.92900 $29.29
100 $2.35370 $235.37
500 $1.83068 $915.34
1,000 $1.51685 $1.51685
3,000 $1.41224 $4.23672
5,000 $1.35993 $6.79965
IRFIBE20GPBF Product Details

IRFIBE20GPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 530pF @ 25V.This device conducts a continuous drain current (ID) of 1.4A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 6.5Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.2 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFIBE20GPBF Features


a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 58 ns
single MOSFETs transistor is 6.5Ohm
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)


IRFIBE20GPBF Applications


There are a lot of Vishay Siliconix
IRFIBE20GPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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