DMT6016LFDF-7

new-10%

Manufacturer part number:DMT6016LFDF-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 60V 8.9A 6UDFN

Case Package:SOT-23

Datasheet:DMT6016LFDF-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	16mOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	S-PDSO-N6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	820mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	3.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	864pF @ 30V
Current - Continuous Drain (Id) @ 25°C	8.9A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	5.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.8 ns
Turn-Off Delay Time	12.9 ns
Continuous Drain Current (ID)	8.9A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
RoHS Status	ROHS3 Compliant