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SPI20N60C3XKSA1

SPI20N60C3XKSA1

SPI20N60C3XKSA1

Infineon Technologies

MOSFET N-CH 650V 20.7A TO-262

SOT-23

SPI20N60C3XKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package PG-TO262-3-1
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 208W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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