Name: STL23NM60ND
Brand: STMicroelectronics
SKU: STL23NM60ND
Availability: InStock

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STL23NM60ND

Manufacturer part number:STL23NM60ND

Manufacturer:STMicroelectronics

Description:STL23NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STL23NM60ND Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	FDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STL23
Pin Count	5
JESD-30 Code	S-XDSO-N4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Ta 150W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 50V
Current - Continuous Drain (Id) @ 25°C	19.5A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	19.5A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	78A
Avalanche Energy Rating (Eas)	700 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STL23NM60ND Product Details

Description

The STL23NM60ND is an N-channel 600 V, 0.175 ? typ., 19.5 A, FDmesh? II Power MOSFET (with fast diode) in PowerFLAT? 8x8 HV package. This fast-recovery body diode FDmesh? II Power MOSFET was created using MDmesh? II technology. This device has an improved switching performance and a reduced on-resistance because of the use of a novel strip layout vertical structure. It is perfect for ZVS phase-shift converters and bridge topologies.