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STP11N65M5

STP11N65M5

STP11N65M5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 480m Ω @ 4.5A, 10V ±25V 644pF @ 100V 17nC @ 10V TO-220-3

SOT-23

STP11N65M5 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STP11N
Number of Elements 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 85W
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 644pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 9A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.48Ohm
Drain to Source Breakdown Voltage 650V
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.63000 $2.63
50 $2.14640 $107.32
100 $1.94550 $194.55
500 $1.54396 $771.98
1,000 $1.30305 $1.30305
2,500 $1.22275 $2.4455
5,000 $1.18260 $5.913
STP11N65M5 Product Details

STP11N65M5 Overview


The maximum input capacitance of this device is 644pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 23 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 23 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

STP11N65M5 Features


a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 23 ns


STP11N65M5 Applications


There are a lot of STMicroelectronics
STP11N65M5 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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