IPB029N06N3GE8187ATMA1

new-10%

Manufacturer part number:IPB029N06N3GE8187ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 120A TO263-3

Case Package:SOT-23

Datasheet:IPB029N06N3GE8187ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.946308g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	188W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 118μA
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 30V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0032Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	235 mJ
Height	4.57mm
Length	10.31mm
Width	9.45mm
RoHS Status	ROHS3 Compliant