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SPP10N10

SPP10N10

SPP10N10

Infineon Technologies

MOSFET N-CH 100V 10.3A TO-220

SOT-23

SPP10N10 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series SIPMOS®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 10.3A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 170m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 21μA
Input Capacitance (Ciss) (Max) @ Vds 426pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Tc
Gate Charge (Qg) (Max) @ Vgs 19.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.3A
JEDEC-95 Code TO-262AA
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

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