SIR850DP-T1-GE3

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SIR850DP-T1-GE3

Manufacturer part number:SIR850DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 25V 30A 41.7W 7.0mohm @ 10V

Case Package:SOT-23

Datasheet:SIR850DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-XDSO-C5
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	4.8W Ta 41.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.8W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1120pF @ 15V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	30A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.007Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	70A
Height	1.04mm
Length	4.9mm
Width	5.89mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant