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FQPF14N30

FQPF14N30

FQPF14N30

ON Semiconductor

FQPF14N30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

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FQPF14N30 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 290mOhm @ 4.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
FQPF14N30 Product Details

FQPF14N30    Description


  These N-channel enhanced mode power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology.

This advanced technology is tailored to minimize on-resistance, provides excellent switching performance and withstands high-energy pulses in avalanche and rectifier modes. These devices are very suitable for high efficiency switching DC/DC converter switching mode power supply.

 

FQPF14N30     Features


·8.5A300VRDS(on)=0.29Ω@VGS=10V

Low gate charge(typical 30nC)

·Low Crss(typical 23pF)

·Fast switching

100% avalanche tested

Improved dv/dt capability

 

FQPF14N30      Applications


high efficiency switching DC

DC converter switching mode power supply

 



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