SPP80N06S2L-07

new-10%

Manufacturer part number:SPP80N06S2L-07

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 80A TO-220

Case Package:SOT-23

Datasheet:SPP80N06S2L-07 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	80A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Voltage	55V
Power Dissipation-Max	210W Tc
Current	80A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	210W
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	2V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	4210pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	450 mJ
Nominal Vgs	1.6 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead