SPS03N60C3

new-10%

Manufacturer part number:SPS03N60C3

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V 3.2A TO251-3

Case Package:SOT-23

Datasheet:SPS03N60C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	38W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	3.9V @ 135μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.2A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	3.2A
JEDEC-95 Code	TO-251AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	9.6A
Dual Supply Voltage	650V
Avalanche Energy Rating (Eas)	100 mJ
Nominal Vgs	3 V
REACH SVHC	Unknown
RoHS Status	RoHS Compliant