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SPW17N80C3A

SPW17N80C3A

SPW17N80C3A

Infineon Technologies

MOSFET N-CH 800V 17A TO-247

SOT-23

SPW17N80C3A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series CoolMOS™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 17A
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 227W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.29Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 51A
Avalanche Energy Rating (Eas) 670 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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