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SSM5N16FUTE85LF

SSM5N16FUTE85LF

SSM5N16FUTE85LF

Toshiba Semiconductor and Storage

MOSFET N-Ch Sm Sig FET 0.1A 20V 2-in-1

SOT-23

SSM5N16FUTE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series π-MOSVI
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Channels 2
Power Dissipation-Max 200mW Ta
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 70 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±10V
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 1.1V
Drain Current-Max (Abs) (ID) 0.1A
Drain to Source Breakdown Voltage 20V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.703308 $0.703308
10 $0.663498 $6.63498
100 $0.625941 $62.5941
500 $0.590511 $295.2555
1000 $0.557086 $557.086

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