STD4NK50Z-1

new-10%

Manufacturer part number:STD4NK50Z-1

Manufacturer:STMicroelectronics

Description:STMICROELECTRONICS STD4NK50Z-1 MOSFET Transistor, N Channel, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V

Case Package:SOT-23

Datasheet:STD4NK50Z-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD4N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	45W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	1.5A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	500V
Height	6.2mm
Length	6.6mm
Width	2.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant