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BF1009SE6327XT

BF1009SE6327XT

BF1009SE6327XT

Infineon Technologies AG

BF1009SE6327XT datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies AG stock available on our website

SOT-23

BF1009SE6327XT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Material Si
ECCN (US) EAR99
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 12
Maximum Gate Source Voltage (V) ±9@Gate 2|9@Gate 1
Maximum Continuous Drain Current (A) 0.025
Typical Input Capacitance @ Vds (pF) 2.1@9V@Gate 1
Typical Forward Transconductance (S) 0.3
Maximum Power Dissipation (mW) 200
Typical Power Gain (dB) 22
Maximum Frequency (MHz) 1000
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
AEC Qualified Yes
AEC Qualified Number AEC-Q101
Standard Package Name TO-253-AA
Supplier Package SOT-143
Military No
Mounting Surface Mount
Package Height 1(Max)
Package Length 2.9
Package Width 1.3
PCB changed 4
Lead Shape Gull-wing
Part Status Obsolete
Pin Count 4
Configuration Single Dual Gate
Channel Type N
RoHS Status RoHS Compliant

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