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FD200R12KE3

FD200R12KE3

FD200R12KE3

Infineon Technologies AG

FD200R12KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

SOT-23

FD200R12KE3 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 5
Transistor Element Material SILICON
Pbfree Code icon-pbfree yes
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
JESD-30 Code R-XUFM-X5
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1040W
Turn On Time 400 ns
Collector Current-Max (IC) 295A
Turn Off Time-Nom (toff) 830 ns
Collector-Emitter Voltage-Max 1200V
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.15 V
RoHS Status RoHS Compliant
FD200R12KE3 Product Details
FD200R12KE3 Description


FD200R12KE3 IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. FD200R12KE3 MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT. Infineon Technologies FD200R12KE3 half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters that require high isolation voltage and long-term dependability.

FD200R12KE3 Features


Superior solution for frequency controlled inverter drives
UL/CSA Certification
Operating temperature up to 125 °C
Existing packages with higher current capability
RoHS compliant


FD200R12KE3 Applications


Motor control and drives
Servo motor
Controller and driver
DC-to-DC power supply modules

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