FD200R12KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website
SOT-23
FD200R12KE3 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Number of Terminals
5
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
5
JESD-30 Code
R-XUFM-X5
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1040W
Turn On Time
400 ns
Collector Current-Max (IC)
295A
Turn Off Time-Nom (toff)
830 ns
Collector-Emitter Voltage-Max
1200V
Gate-Emitter Voltage-Max
20V
VCEsat-Max
2.15 V
RoHS Status
RoHS Compliant
FD200R12KE3 Product Details
FD200R12KE3 Description
FD200R12KE3 IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. FD200R12KE3 MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT. Infineon Technologies FD200R12KE3 half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters that require high isolation voltage and long-term dependability.
FD200R12KE3 Features
Superior solution for frequency controlled inverter drives UL/CSA Certification Operating temperature up to 125 °C Existing packages with higher current capability RoHS compliant
FD200R12KE3 Applications
Motor control and drives Servo motor Controller and driver DC-to-DC power supply modules