FF200R12KS4 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website
SOT-23
FF200R12KS4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Number of Terminals
7
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Additional Feature
FAST
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
2
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1400W
Turn On Time
180 ns
Collector Current-Max (IC)
275A
Turn Off Time-Nom (toff)
590 ns
Collector-Emitter Voltage-Max
1200V
Gate-Emitter Voltage-Max
20V
VCEsat-Max
3.7 V
RoHS Status
RoHS Compliant
FF200R12KS4 Product Details
FF200R12KS4 Description
FF200R12KS4 IGBT is built on a brand new idea of planar technology to create an IGBT that has a more precise variation of the energy of switching against temperature. IGBT FF200R12KS4 is the subset of IGBTs that are suited to operate at a high frequency that exceeds 100 kHz. FF200R12KS4 Infineon Technologies is suitable for Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Power Supplies, Consumer Electronics Power Supplies.