VS-GB100TH120N

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Manufacturer part number:VS-GB100TH120N

Manufacturer:Vishay Semiconductor Diodes Division

Description:IGBT 1200V 200A 833W INT-A-PAK

Case Package:SOT-23

Datasheet:VS-GB100TH120N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Operating Temperature	150°C TJ
Published	2015
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	833W
Number of Elements	1
Configuration	Half Bridge
Power - Max	833W
Input	Standard
Collector Emitter Voltage (VCEO)	2.35V
Max Collector Current	200A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	8.58nF
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 100A
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	8.58nF @ 25V
RoHS Status	ROHS3 Compliant