APTGF50DA120CT1G

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Manufacturer part number:APTGF50DA120CT1G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 75A 10-Pin Case SP-1

Case Package:SOT-23

Datasheet:APTGF50DA120CT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	10
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	312W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
JESD-30 Code	R-XUFM-X7
Qualification Status	Not Qualified
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	75A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.45nF
Turn On Time	100 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 50A
Turn Off Time-Nom (toff)	400 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.45nF @ 25V
VCEsat-Max	3.7 V
RoHS Status	RoHS Compliant