Description

The FF50R12RT4 is a 34 mm 1200 V, 50 A dual IGBT module with fast TRENCHSTOP? IGBT4 and Emitter Controlled 4 Diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.

Features

• Tvj op = 150°C

• VCEsat with positive Temperature Coefficient

• Isolated Base Plate

• Standard Housing

• Extended Operation Temperature T vj op

• Low Switching Losses

• Low VCEsat

Applications

• Motor control and drives

• Uninterruptible Power Supply (UPS)

• AC and DC motor drives offering speed control

• Chopper and inverters

• Solar inverters