IPB200N25N3 G Description

The IPB200N25N3 G is an N-channel Power MOSFET produced based on OptiMOS? leading benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS), and inverters. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IPB200N25N3 G is in the TO-263-3 package with 300W power dissipation.

IPB200N25N3 G Features

• Industry's lowest RDS (ON)

• Lowest Qg and Qgd

• The world's lowest FOM, MSL 1 rated

• Highest efficiency

• Highest Power density

• Minimal device paralleling required

• Environmentally friendly

• Easy-to-design-in products

• Ideal for high-frequency switching and synchronous rectification

• Qualified according to JEDEC for the target application

IPB200N25N3 G Applications

• Power Management

• Motor Drive & Control

• Industrial

• Lighting

• Audio