IS25WP032A-JKLE

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Manufacturer part number:IS25WP032A-JKLE

Manufacturer:ISSI, Integrated Silicon Solution Inc

Description:Memory IC 6mm mm

Case Package:SOT-23

Datasheet:IS25WP032A-JKLE Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	8-WDFN Exposed Pad
Surface Mount	YES
Operating Temperature	-40°C~105°C TA
Packaging	Tray
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	8
Technology	FLASH - NOR
Voltage - Supply	1.65V~1.95V
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Number of Functions	1
Supply Voltage	1.8V
Terminal Pitch	1.27mm
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-N8
Supply Voltage-Max (Vsup)	1.95V
Supply Voltage-Min (Vsup)	1.65V
Memory Size	32Mb 4M x 8
Memory Type	Non-Volatile
Operating Mode	SYNCHRONOUS
Clock Frequency	133MHz
Memory Format	FLASH
Memory Interface	SPI - Quad I/O, QPI, DTR
Organization	4MX8
Memory Width	8
Write Cycle Time - Word, Page	800μs
Memory Density	33554432 bit
Parallel/Serial	SERIAL
Programming Voltage	1.8V
Height Seated (Max)	0.8mm
Length	6mm
Width	5mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
570	$2.40540	$1371.078

IS25WP032A-JKLE Overview

Non-Volatile is its memory type. The case comes in Tray size. The 8-WDFN Exposed Pad case contains it. There is 32Mb 4M x 8 of memory on the chip. Memory data is stored in FLASH-format, which is common in mainstream devices. -40°C~105°C TA is an extended operating temperature range, making this device ideal for demanding applications. It is supplied votage within 1.65V~1.95V. The recommended mounting type for this device is Surface Mount. As you can see from the diagram, the chip is planted with 8 terminations. It supports up to 1 functions for comprehensive operation. In order to power this memory device, 1.8V will be necessary. In order to operate effectively, the memory rotates at a clock frequency within a range of 133MHz. A programming voltage of 1.8V is required to alter the state of certain nonvolatile memory arrays.