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DE275X2-501N16A

DE275X2-501N16A

DE275X2-501N16A

IXYS

DE275X2-501N16A datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IXYS stock available on our website

SOT-23

DE275X2-501N16A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.29.00.95
Channel Mode Enhancement
Number of Elements per Chip 2
Maximum Drain Source Voltage (V) 500
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 16
Maximum Drain Source Resistance (mOhm) 380@15V
Typical Gate Charge @ Vgs (nC) 50@10V
Typical Input Capacitance @ Vds (pF) 1800@400V
Typical Reverse Transfer Capacitance @ Vds (pF) 45@400V
Typical Output Capacitance @ Vds (pF) 150@400V
Maximum Power Dissipation (mW) 5000
Maximum Frequency (MHz) 65
Typical Turn-Off Delay Time (ns) 4
Typical Turn-On Delay Time (ns) 3
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
AEC Qualified No
Standard Package Name SMD
Supplier Package SMD
Military No
Mounting Surface Mount
Package Height 3.18
Package Length 22.86
Package Width 16.61
PCB changed 8
Lead Shape Flat
Manufacturer IXYS Corporation
Pbfree Code Yes
Part Status Obsolete
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 8
Qualification Status Not Qualified
Configuration Single
Channel Type N
Highest Frequency Band VERY HIGH FREQUENCY BAND
RoHS Status RoHS Compliant

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