IXA60IF1200NA

new-10%

Manufacturer part number:IXA60IF1200NA

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXA60IF1200NA IGBT Single Transistor, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 Pins

Case Package:SOT-23

Datasheet:IXA60IF1200NA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Chassis, Screw, Stud, Surface Mount
Mounting Type	Chassis, Stud Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2010
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	NICKEL
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	290W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Power Dissipation	290W
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	88A
Reverse Recovery Time	350 ns
Current - Collector Cutoff (Max)	100μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	110 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	9.6mm
Length	38.23mm
Width	25.25mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free