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APTGL120TDU120TPG

APTGL120TDU120TPG

APTGL120TDU120TPG

Microsemi Corporation

Trans IGBT Module N-CH 1.2KV 140A 23-Pin Case SP-6P

SOT-23

APTGL120TDU120TPG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 23
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 23
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 517W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 23
Qualification Status Not Qualified
Number of Elements 6
Configuration Triple, Dual - Common Source
Case Connection ISOLATED
Power - Max 517W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 140A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 6.2nF
Turn On Time 185 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 100A
Turn Off Time-Nom (toff) 430 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.2nF @ 25V
VCEsat-Max 2.15 V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $159.67900 $15967.9

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