IXBH24N170

new-10%

Manufacturer part number:IXBH24N170

Manufacturer:IXYS

Description:IGBT 1700V 60A 250W TO247

Case Package:SOT-23

Datasheet:IXBH24N170 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	BIMOSFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Rise Time	28ns
Polarity/Channel Type	N-CHANNEL
Fall Time (Typ)	26 ns
Turn-Off Delay Time	65 ns
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	60A
Reverse Recovery Time	1.06 μs
Continuous Drain Current (ID)	3.2A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.7kV
Gate to Source Voltage (Vgs)	30V
Voltage - Collector Emitter Breakdown (Max)	1700V
Drain to Source Breakdown Voltage	500V
Turn On Time	190 ns
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 24A
Drain to Source Resistance	1.4Ohm
Turn Off Time-Nom (toff)	1285 ns
Gate Charge	140nC
Current - Collector Pulsed (Icm)	230A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant