IXDN55N120D1

new-10%

Manufacturer part number:IXDN55N120D1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.2KV 100A 4-Pin SOT-227B

Case Package:SOT-23

Datasheet:IXDN55N120D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount, Screw, Surface Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2007
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	450W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Turn On Delay Time	100 ns
Power - Max	450W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	500 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	100A
Current - Collector Cutoff (Max)	3.8mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.3V
Input Capacitance	3.3nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 55A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.3nF @ 25V
Gate-Emitter Thr Voltage-Max	6.5V
Height	9.6mm
Length	38.2mm
Width	25.07mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free