IXXK160N65C4

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Manufacturer part number:IXXK160N65C4

Manufacturer:IXYS

Description:IGBT Transistors 650V/290A Trench IGBT GenX4 XPT

Case Package:SOT-23

Datasheet:IXXK160N65C4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX4™, XPT™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	940W
Base Part Number	160N65
Element Configuration	Single
Power Dissipation	940W
Input Type	Standard
Turn On Delay Time	52 ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	197 ns
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	290A
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.7V
Test Condition	400V, 80A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 160A
IGBT Type	PT
Gate Charge	422nC
Current - Collector Pulsed (Icm)	800A
Td (on/off) @ 25°C	52ns/197ns
Switching Energy	3.5mJ (on), 1.3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free