STGW60H65DF

new-10%

Manufacturer part number:STGW60H65DF

Manufacturer:STMicroelectronics

Description:STGW60H65DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW60H65DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Lifecycle Status	NRND (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	360W
Base Part Number	STGW60
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	67 ns
Power - Max	360W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	165 ns
Collector Emitter Voltage (VCEO)	350V
Max Collector Current	120A
Reverse Recovery Time	62 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	113 ns
Test Condition	400V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 60A
Turn Off Time-Nom (toff)	247 ns
IGBT Type	Trench Field Stop
Gate Charge	206nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	67ns/165ns
Switching Energy	1.5mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free