IXFA36N20X3

new-10%

Manufacturer part number:IXFA36N20X3

Manufacturer:IXYS

Description:200V/36A ULTRA JUNCTION X3-CLASS

Case Package:SOT-23

Datasheet:IXFA36N20X3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	176W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	1425pF @ 25V
Current - Continuous Drain (Id) @ 25°C	36A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	36A
Drain-source On Resistance-Max	0.045Ohm
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	300 mJ
RoHS Status	ROHS3 Compliant