FQP6N80

new-10%

Manufacturer part number:FQP6N80

Manufacturer:ON Semiconductor

Description:FQP6N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP6N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	1.95Ohm
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	5.8A
Number of Elements	1
Power Dissipation-Max	158W Tc
Element Configuration	Single
Power Dissipation	158W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.95 Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.8A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	70ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	5.8A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Dual Supply Voltage	800V
Nominal Vgs	5 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free