A device's maximal input capacitance is 3490pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 4.1mOhm.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SIRA01DP-T1-GE3 Features
single MOSFETs transistor is 4.1mOhm a 30V drain to source voltage (Vdss)
SIRA01DP-T1-GE3 Applications
There are a lot of Vishay Siliconix SIRA01DP-T1-GE3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU