IXFC74N20P

new-10%

IXFC74N20P

Manufacturer part number:IXFC74N20P

Manufacturer:IXYS

Description:Trans MOSFET N-CH 200V 35A 3-Pin(3+Tab) ISOPLUS 220

Case Package:SOT-23

Datasheet:IXFC74N20P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS220™
Number of Pins	220
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	PolarHT™ HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	120W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	120W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 37A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Rise Time	21ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	60 ns
Reverse Recovery Time	200 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.036Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	200A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	1000 mJ
Isolation Voltage	2.5kV
Nominal Vgs	5 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant