IXFH100N25P

new-10%

Manufacturer part number:IXFH100N25P

Manufacturer:IXYS

Description:MOSFET N-CH 250V 100A TO-247

Case Package:SOT-23

Datasheet:IXFH100N25P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHT™ HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	600W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	6300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	185nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.027Ohm
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	250A
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant