The FDS8813NZ is an N-channel MOSFET produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance. The onsemi FDS8813NZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDS8813NZ Features
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.5 A
Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 16 A
HBM ESD protection level of 5.6kV typical (note 3)
High-performance trench technology for extremely low rDS(on)