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FDS8813NZ

FDS8813NZ

FDS8813NZ

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.5m Ω @ 18.5A, 10V ±20V 4145pF @ 15V 76nC @ 10V 8-SOIC (0.154, 3.90mm Width)

SOT-23

FDS8813NZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 4.5MOhm
Terminal Finish TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4145pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18.5A Ta
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 18.5A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.8 V
Feedback Cap-Max (Crss) 520 pF
Height 1.575mm
Length 4.9mm
Width 3.9mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.61200 $1.224
5,000 $0.58140 $2.907
12,500 $0.55954 $6.71448
FDS8813NZ Product Details

FDS8813NZ Description


The FDS8813NZ is an N-channel MOSFET produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance. The onsemi FDS8813NZ is well suited for  Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. 



FDS8813NZ Features


  • Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.5 A

  • Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 16 A

  • HBM ESD protection level of 5.6kV typical (note 3)

  • High-performance trench technology for extremely low rDS(on)

  • High power and current handling capability

  • RoHS compliant



FDS8813NZ Applications


  • Notebook Computers

  • Portable Battery Packs


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