STB28N60DM2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STB28N60DM2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ DM2
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Base Part Number
STB28N
Power Dissipation-Max
170W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 100V
Current - Continuous Drain (Id) @ 25°C
21A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Continuous Drain Current (ID)
21A
Threshold Voltage
4V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STB28N60DM2 Product Details
STB28N60DM2 Description
STB28N60DM2 is an N-channel power MOSFET in the D2PAK package. This high voltage N-channel Power MOSFET is a part of the MDmesh? DM2 fast recovery diode series. The STMicroelectronics STB28N60DM2 offers a very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.