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IXFH120N20P

IXFH120N20P

IXFH120N20P

IXYS

IXYS SEMICONDUCTOR IXFH120N20P MOSFET Transistor, N Channel, 120 A, 200 V, 22 mohm, 10 V, 5 V

SOT-23

IXFH120N20P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2006
Series HiPerFET™, PolarP2™
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 22MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 714W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation714W
Case Connection DRAIN
Turn On Delay Time30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Rise Time35ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 5V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 2000 mJ
Height 21.46mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:593 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.526117$2.526117
10$2.383130$23.8313
100$2.248236$224.8236
500$2.120977$1060.4885
1000$2.000921$2000.921

About IXFH120N20P

The IXFH120N20P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IXYS SEMICONDUCTOR IXFH120N20P MOSFET Transistor, N Channel, 120 A, 200 V, 22 mohm, 10 V, 5 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFH120N20P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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