IXFH12N100F

new-10%

Manufacturer part number:IXFH12N100F

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 12A TO-247AD

Case Package:SOT-23

Datasheet:IXFH12N100F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	HiPerRF™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.05 Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Rise Time	9.8ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	31 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	3V
JEDEC-95 Code	TO-247
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	48A
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free