IXFH12N120P

new-10%

Manufacturer part number:IXFH12N120P

Manufacturer:IXYS

Description:MOSFET N-CH 1200V 12A TO-247

Case Package:SOT-23

Datasheet:IXFH12N120P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	HiPerFET™, PolarP2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.35Ohm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	543W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	543W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.35 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	103nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	34 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	6.5V
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1.2kV
Avalanche Energy Rating (Eas)	500 mJ
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free