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TK5Q65W,S1Q

TK5Q65W,S1Q

TK5Q65W,S1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 5.2A IPAK

SOT-23

TK5Q65W,S1Q Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Operating Temperature 150°C TJ
Packaging Tube
Published 2015
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.22 Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 300V
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 5.2A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
75 $0.92400 $69.3

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