IXTA48N20T

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IXTA48N20T

Manufacturer part number:IXTA48N20T

Manufacturer:IXYS

Description:N-Channel 200 V 48 A 50 mO Surface Mount Trench Power Mosfet - TO-263

Case Package:SOT-23

Datasheet:IXTA48N20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	Trench™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3090pF @ 25V
Current - Continuous Drain (Id) @ 25°C	48A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	48A
JEDEC-95 Code	TO-263AA
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.05Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	130A
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free