IXFH20N60

new-10%

IXFH20N60

Manufacturer part number:IXFH20N60

Manufacturer:IXYS

Description:MOSFET N-CH 600V 20A TO-247AD

Case Package:SOT-23

Datasheet:IXFH20N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	350MOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	70 ns
Reverse Recovery Time	250 ns
Continuous Drain Current (ID)	20A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	80A
Dual Supply Voltage	600V
Nominal Vgs	4.5 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free