APT32F120J

new-10%

Manufacturer part number:APT32F120J

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 1200V 33A SOT-227

Case Package:SOT-23

Datasheet:APT32F120J Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Contact Plating	Tin
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	30.000004g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS 8™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, UL RECOGNIZED, HIGH RELIABILITY
Voltage - Rated DC	1.2kV
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	32A
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	960W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960W
Case Connection	ISOLATED
Turn On Delay Time	100 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	320m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	18200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	560nC @ 10V
Rise Time	60ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	315 ns
Continuous Drain Current (ID)	33A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.32Ohm
Drain to Source Breakdown Voltage	1.2kV
Avalanche Energy Rating (Eas)	2700 mJ
Height	9.6mm
Length	38.2mm
Width	25.4mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free