SI7149ADP-T1-GE3

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SI7149ADP-T1-GE3

Manufacturer part number:SI7149ADP-T1-GE3

Manufacturer:Vishay Siliconix

Description:SI7149ADP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SI7149ADP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5W Ta 48W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	48W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5125pF @ 15V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	58 ns
Continuous Drain Current (ID)	-50A
Threshold Voltage	-2.5V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.0052Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	300A
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free