IXFH21N50F

new-10%

Manufacturer part number:IXFH21N50F

Manufacturer:IXYS

Description:IXYS RF IXFH21N50F RF FET Transistor, 500 V, 21 A, 300 W, 500 kHz, TO-247AD

Case Package:SOT-23

Datasheet:IXFH21N50F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	HiPerRF™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7.7 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	84A
Avalanche Energy Rating (Eas)	1500 mJ
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant