IXFH32N50

new-10%

Manufacturer part number:IXFH32N50

Manufacturer:IXYS

Description:MOSFET N-CH 500V 32A TO-247AD

Case Package:SOT-23

Datasheet:IXFH32N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Resistance	150mOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	32A
Pin Count	3
Number of Elements	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Rise Time	42ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
Dual Supply Voltage	500V
Recovery Time	250 ns
Nominal Vgs	4 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free