SIHG14N50D-E3

new-10%

Manufacturer part number:SIHG14N50D-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 14A TO-247AC

Case Package:SOT-23

Datasheet:SIHG14N50D-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	208W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1144pF @ 100V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	14A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.4Ohm
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	56 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant