AUIRFR4105ZTRL

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Manufacturer part number:AUIRFR4105ZTRL

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 30A DPAK

Case Package:SOT-23

Datasheet:AUIRFR4105ZTRL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	48W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	48W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0245Ohm
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	29 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free