IXFK150N30X3

new-10%

Manufacturer part number:IXFK150N30X3

Manufacturer:IXYS

Description:300V/150A ULTRA JUNCTION X3-CLAS

Case Package:SOT-23

Datasheet:IXFK150N30X3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	890W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	13.1nF @ 25V
Current - Continuous Drain (Id) @ 25°C	150A Tc
Gate Charge (Qg) (Max) @ Vgs	254nC @ 10V
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	150A
Drain-source On Resistance-Max	0.0083Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	300V
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant