TK100A10N1,S4X Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 222 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8800pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 140 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 59 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

TK100A10N1,S4X Features

the avalanche energy rating (Eas) is 222 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 140 ns
a 100V drain to source voltage (Vdss)

TK100A10N1,S4X Applications

There are a lot of Toshiba Semiconductor and Storage
TK100A10N1,S4X applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification